On the Electron Photoionization Cross-Section of EL2 in GaAs
- 1 June 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (6R)
- https://doi.org/10.1143/jjap.28.1135
Abstract
From an analysis of literature data as well as our own measurements it is shown that the recently published electron photoionization cross-section σ n 0(λ, T) of the EL2-as determined by photocapacitance techniques-includes major contributions of the intracentre transition cross-section σ n *(λ, T). So the σ n 0(λ, T) as determined by photocapacitance measurements is essentially identical to the σ n (λ, T) observed in optical absorption experiments and can be used in the analysis of the latter.Keywords
This publication has 3 references indexed in Scilit:
- Optical Mapping of the Total EL2-Concentration in Semi-Insulating GaAs-WafersJapanese Journal of Applied Physics, 1989
- Hole photoionization cross sections of EL2 in GaAsApplied Physics Letters, 1988
- Intracenter transitions in the dominant deep level (EL2) in GaAsApplied Physics Letters, 1983