Tunable photonic crystal coupled-cavity laser
- 30 August 2004
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 40 (9) , 1306-1314
- https://doi.org/10.1109/jqe.2004.831638
Abstract
We report the development of a tunable photonic crystal coupled-cavity laser diode based on InP. The laser consists of two photonic crystal channel waveguides that are coupled through a photonic crystal mirror segment in /spl Gamma/-M direction. The cavity lengths define the respective mode spacings in the cavities. The tuning characteristics of the device are compared with results obtained from a transfer matrix model. Quasi-continuous tuning is achieved in a 29.6-nm window with 36 wavelength division multiplexing channels spaced 0.8 nm apart (ITU grid). The simplicity of fabrication and promising output characteristics should make this tunable laser design an interesting source for monolithic integration into highly integrated photonic circuits.Keywords
This publication has 25 references indexed in Scilit:
- Tunable distributed feedback laser with photonic crystal mirrorsApplied Physics Letters, 2003
- Two-dimensional photonic crystal coupled-defect laser diodeApplied Physics Letters, 2003
- Characteristics of modified single-defect two-dimensional photonic crystal lasersIEEE Journal of Quantum Electronics, 2002
- Trapping and emission of photons by a single defect in a photonic bandgap structureNature, 2000
- Two-Dimensional Photonic Band-Gap Defect Mode LaserScience, 1999
- High Transmission through Sharp Bends in Photonic Crystal WaveguidesPhysical Review Letters, 1996
- Modelling the dynamics of wavelength tuning in DBR-lasersIEEE Photonics Technology Letters, 1994
- Analysis and simple tuning scheme of asymmetric Y-lasersIEEE Journal of Quantum Electronics, 1994
- High-speed direct single-frequency modulation with large tuning rate and frequency excursion in cleaved-coupled-cavity semiconductor lasersApplied Physics Letters, 1983
- Monolithic two-section GaInAsP/InP active-optical-resonator devices formed by reactive ion etchingApplied Physics Letters, 1981