Monolithic two-section GaInAsP/InP active-optical-resonator devices formed by reactive ion etching
- 1 March 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (5) , 315-317
- https://doi.org/10.1063/1.92353
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- GaInAsP/InP stripe-geometry laser with a reactive-ion-etched facetApplied Physics Letters, 1980
- Integrated In 0.53 Ga 0.47 As p-i-n f.e.t. photoreceiverElectronics Letters, 1980
- GaInAsP/InP laser with monolithically integrated monitoring detectorElectronics Letters, 1980
- GaInAsP/InP Integrated Twin-Guide Lasers with First-Order Distributed Bragg Reflectors at 1.3 µm WavelengthJapanese Journal of Applied Physics, 1980
- Ultimate low-loss single-mode fibre at 1.55 μmElectronics Letters, 1979
- Mode selection in lasersProceedings of the IEEE, 1972
- Analysis of a proposed bistable injection laserSolid-State Electronics, 1964