Analysis of field-effect-conductance measurements on amorphous semiconductors
- 1 January 1981
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 43 (1) , 93-103
- https://doi.org/10.1080/01418638108225803
Abstract
A method for calculating the relationship between the density of localized states in an amorphous semiconductor and the experimentally measured field-effect conductance is presented. Commonly used simplifying assumptions of a constant space-charge density, zero-temperature statistics and a parabolic band-bending potential profile are removed and the errors that are introduced by using these approximations calculated. The method is used to show that the existence of a reported peak in the density of states at 0·4 eV below the conduction-band mobility edge of amorphous silicon (the Ex peak) cannot be proved through field-effect-conductance measurements.Keywords
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