Determination of landau level lifetimes in n-GaAs
- 31 August 1979
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 31 (7) , 465-468
- https://doi.org/10.1016/0038-1098(79)90440-x
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Hot-electron energy distribution in strong magnetic fieldsJournal of Physics C: Solid State Physics, 1978
- Far-Infrared Recombination Radiation from Impact-Ionized Shallow Donors in GaAsPhysical Review Letters, 1969
- FAR-INFRARED PHOTOCONDUCTIVITY IN HIGH-PURITY EPITAXIAL GaAsApplied Physics Letters, 1968
- Far Infra‐Red PhotoconductivityPhysica Status Solidi (b), 1964