Anomalous behaviour of n-channel MOS transistor characteristics in the temperature range 4.2–14 K
- 31 August 1989
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 32 (8) , 603-605
- https://doi.org/10.1016/0038-1101(89)90137-8
Abstract
No abstract availableKeywords
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