Pseudomorphic InGaAs/AlGaAs modulation-doped FET's with reduced low-frequency noise and thermally stable performance
- 2 February 1987
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 81 (1) , 359-367
- https://doi.org/10.1016/0022-0248(87)90417-9
Abstract
No abstract availableKeywords
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