The nature of the midgap defect transition in intrinsic a-Si:H as deduced by depletion width modulation electron spin resonance
- 1 December 1989
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 114, 435-437
- https://doi.org/10.1016/0022-3093(89)90609-1
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Identification of deep-gap states ina-Si:H by photo- depopulation-induced electron-spin resonancePhysical Review B, 1985
- Identification of the Dangling-Bond State within the Mobility Gap of-Si: H by Depletion-Width-Modulated ESR SpectroscopyPhysical Review Letters, 1982
- Electron Spin Resonance Experiments on Donors in Silicon. I. Electronic Structure of Donors by the Electron Nuclear Double Resonance TechniquePhysical Review B, 1959