Improvement of structural instability of the ion-sensitive field-effect transistor (ISFET)
- 1 May 1993
- journal article
- Published by Elsevier in Sensors and Actuators B: Chemical
- Vol. 13 (1-3) , 209-211
- https://doi.org/10.1016/0925-4005(93)85363-f
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Ion-sensing devices with silicon nitride and borosilicate glass insulatorsIEEE Transactions on Electron Devices, 1987
- Dipole layers at the metal-SiO2 interfaceJournal of Applied Physics, 1980