Selective RTLPCVD of TiSi2 without substrate consumption
- 1 November 1991
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 53, 11-17
- https://doi.org/10.1016/0169-4332(91)90235-c
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
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- Selective layers of TiSi2 deposited without substrate consumption in a cold wall LPCVD reactorApplied Surface Science, 1989
- Selective epitaxial silicon growth in the 650–1100 °C range in a reduced pressure chemical vapor deposition reactor using dichlorosilaneApplied Physics Letters, 1989
- Optimized Deposition Parameters for Low Pressure Chemical Vapor Deposited Titanium SilicideJournal of the Electrochemical Society, 1988
- Process control of titanium silicide formation using rapid thermal processingNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987