Non-destructive characterisation of n-type InP epitaxial layers by infrared reflectivity measurements
- 14 February 1983
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 16 (2) , 213-223
- https://doi.org/10.1088/0022-3727/16/2/019
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Infrared reflectivity measurements on bulk and epitaxial GaSb. (Carrier concentration and mobility measurements)Journal of Physics C: Solid State Physics, 1980
- Electron mobility and free-carrier absorption in InP; determination of the compensation ratioJournal of Applied Physics, 1980
- Infrared and electrical characterization of multilayered n-type GaAs wafersJournal of Applied Physics, 1979
- Infrared reflectance studies of bulk and epitaxial-film n-type GaAsJournal of Applied Physics, 1977
- Study of the dielectric function of PbSnTe epitaxial film by far-infrared reflectivityPhysical Review B, 1976
- The magnetophonon effect in epitaxial films of n-type inpJournal of Physics C: Solid State Physics, 1971
- Infrared reflectivity of InPJournal of Physics and Chemistry of Solids, 1971
- The preparation of high purity epitaxial InPSolid State Communications, 1970
- The optical frequencies and dielectric constants of InPSolid State Communications, 1969
- Electron effective-mass values in GaxIn1−xSb alloysCanadian Journal of Physics, 1969