The preparation of high purity epitaxial InP
- 15 July 1970
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 8 (14) , 1125-1128
- https://doi.org/10.1016/0038-1098(70)90010-4
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Epitaxial Growth of Indium Phosphide in an Open Flow SystemJapanese Journal of Applied Physics, 1969
- The Preparation and Properties of Vapor-Deposited Epitaxial InAs[sub 1−x]P[sub x] Using Arsine and PhosphineJournal of the Electrochemical Society, 1969
- Liquid encapsulation techniques: The use of an inert liquid in suppressing dissociation during the melt-growth of InAs and GaAs crystalsJournal of Physics and Chemistry of Solids, 1965
- The preparation of high purity gallium arsenide by vapour phase epitaxial growthSolid-State Electronics, 1965
- Diffusion and Solubility of Copper in Extrinsic and Intrinsic Germanium, Silicon, and Gallium ArsenideJournal of Applied Physics, 1964
- Electron Mobility in InPJournal of the Electrochemical Society, 1958