Photoluminescence studies of vacancies and vacancy-impurity complexes in annealed GaAs
- 1 June 1975
- journal article
- Published by Elsevier in Journal of Luminescence
- Vol. 10 (5) , 313-322
- https://doi.org/10.1016/0022-2313(75)90054-x
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Properties of vacancy defects in GaAs single crystalsJournal of Applied Physics, 1975
- Photoluminescence of Donor Doped GaAs Diffused with CopperJapanese Journal of Applied Physics, 1971
- Optical Properties of n-Type GaAs. III. Relative Band-Edge Recombination Efficiency of Si- and Te-Doped Crystals before and after Heat TreatmentJournal of Applied Physics, 1969
- Optical Properties of n-Type GaAs. II. Formation of Efficient Hole Traps during Annealing in Te-Doped GaAsJournal of Applied Physics, 1969
- Evidence for Luminescence Involving Arsenic Vacancy-Acceptor Centers in-Type GaAsPhysical Review B, 1969
- Effect of Heat Treatment on the 1.370 eV Photoluminescence Emission Band in Zn-Doped GaAsJournal of Applied Physics, 1968
- Evidence for Self-Activated Luminescence in GaAs: The Gallium Vacancy-Donor CenterPhysical Review B, 1968
- Photoluminescence of Cu-Doped Gallium ArsenideJournal of Applied Physics, 1966
- Infrared Transmission and Fluorescence of Doped Gallium ArsenidePhysical Review B, 1964
- Role of Oxygen in Reducing Silicon Contamination of GaAs during Crystal GrowthJournal of Applied Physics, 1963