Electron beam induced dissociation and conductivity of SnO2 films
- 1 September 1981
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (9) , 5696-5698
- https://doi.org/10.1063/1.329506
Abstract
The effect of electron bombardment on rf‐sputtered SnO2 films was studied using mass spectrometry, Auger electron spectroscopy, and conductivity measurements. The studies show that the electron beam causes surface dissociation and subsequent desorption of atomic oxygen. The dissociation is accompanied by corresponding increase of film conductivity, which persists in ultrahigh vacuum conditions and can eliminated by O2 introduction. A model of the correlated processes is suggested.This publication has 8 references indexed in Scilit:
- Phase-sensitive detection of electron-beam-induced desorption from ZnOJournal of Applied Physics, 1980
- Oxygen chemisorption on tin oxide: Correlation between electrical conductivity and EPR measurementsJournal of Vacuum Science and Technology, 1980
- Electron induced dissociation of the NaCl(111) surfaceSurface Science, 1979
- 2. An uhv system for in situ preparation and analysis of thin films and surfacesVacuum, 1978
- AES studies of chemical shift and beam effect on molybdenum oxidesJournal of Vacuum Science and Technology, 1978
- Physical Properties of SnO2 Materials: II . Electrical PropertiesJournal of the Electrochemical Society, 1976
- Defect structure and electronic donor levels in stannic oxide crystalsJournal of Applied Physics, 1973
- Electron Effective Mass of SnO2Journal of the Physics Society Japan, 1965