Closed-form approximation for the perturbationofMOSFET surface potential by quantum-mechanical effects
- 8 June 2000
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 36 (12) , 1072-1073
- https://doi.org/10.1049/el:20000778
Abstract
A computationally efficient analytical approximation of quantum-mechanical effects within the context of a surface-potential-based compact MOSFET model is presented. The results are verified by comparison with numerical calculations and experimental data for deep submicron devices.Keywords
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