Improved Ambipolar Diffusion Length in a-Si1-xGex:H Alloys for Multi-Junction Solar Cells
- 1 January 1995
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Hopping of Electrons in Hybrid Band Tails of a-Si1-xGex:HMRS Proceedings, 1990
- Extended State Mobility and Tail State Distribution of a-Si1-xGex:H AlloysMRS Proceedings, 1988
- Steady-state photocarrier grating technique for diffusion-length measurement in semiconductors: Theory and experimental results for amorphous silicon and semi-insulating GaAsJournal of Applied Physics, 1987
- Fluorinated amorphous silicon-germanium alloys deposited from disilane-germane mixtureJournal of Non-Crystalline Solids, 1987
- Gap-state distribution in n-type and p-type a-Si:H from optical absorptionJournal of Non-Crystalline Solids, 1987
- Guiding principle for preparing highly photosensitive Si-based amorphous alloysJournal of Non-Crystalline Solids, 1987
- Influence of microstructure on the photoconductivity of glow discharge deposited amorphous SiC:H and amorphous SiGe:H alloysApplied Physics Letters, 1987
- Transport properties of α-Si, Ge:H alloys prepared from SiF4, GeF4 and H2 in R.F. or D.C. Glow dischargesJournal of Non-Crystalline Solids, 1985
- Preparation of photoconductive a-SiGe alloy by glow dischargeJournal of Non-Crystalline Solids, 1983
- Preferential Attachment of H in Amorphous Hydrogenated Binary Semiconductors and Consequent Inferior Reduction of Pseudogap State DensityPhysical Review Letters, 1981