High reliability power GaAs MESFET under RF overdrive condition
- 30 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 289-292 vol.1
- https://doi.org/10.1109/mwsym.1993.276821
Abstract
It has been confirmed that the SiO/sub 2/-passivation power GaAs MESFETs are very stable compared with the SiN-passivation FETs, especially in terms of RF overdrive operation. Based on the overdrive reliability study that has been conducted, high-power GaAs MESFETs were designed and fabricated. No degradation was observed up to 1500 hours of operation even under very high stress (8-dB gain compression) for these power GaAs MESFETs.<>Keywords
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