Multilayered structures of epitaxial indium phosphide
- 1 December 1975
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 31, 190-196
- https://doi.org/10.1016/0022-0248(75)90130-x
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- High-efficiency InP transferred-electron oscillatorsElectronics Letters, 1974
- Measurement of carrier-concentration profiles in epitaxial indium phosphideElectronics Letters, 1973
- Vapor growth of epitaxial GaAs: A summary of parameters which influence the purity and morphology of epitaxial layersJournal of Crystal Growth, 1972
- The preparation of high purity epitaxial InPSolid State Communications, 1970
- On the Measurement of Impurity Atom Distributions in Silicon by the Differential Capacitance TechniqueIBM Journal of Research and Development, 1968