The electro-optic coefficients of GaAs: Measurements at 1.32 and 1.52 μm and study of their dispersion between 0.9 and 10 μm

Abstract
The linear (r41) and quadratic (R11 and R12) electro‐optic coefficients of GaAs have been measured at the wavelengths 1.32 and 1.52 μm using single‐mode AlGaAs/GaAs strip‐loaded waveguides. The results are r41=−(1.54±0.08)×10−10 cm/V, R11=−(9.3±2.8)×10−17 cm2/V2 and R12=−(5.1±l.9)×10−17 cm2/V2 at 1.32 μm and r41=−(1.50±0.08)×10−10 cm/V, R11=−(3.2±2.3)×10−17 cm2/V2 and R12=−(5.1±2.6)×10−17 cm2/V2 at 1.52 μm. These results, together with those previously measured at different wavelengths, are compared with published theoretical models. The linear electro‐optic coefficient r41 is slightly dispersive near the band gap and roughly constant for longer wavelengths, in good agreement with the models. The quadratic electro‐optic coefficients drop rapidly with increasing wavelength, in good agreement with a model based on electroabsorption.