Positron Study of Vacancy-Type Defects Induced by Heavy Doping into MBE-Grown GaAs
- 1 February 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (2A) , L346
- https://doi.org/10.1143/jjap.29.l346
Abstract
Variable-energy positron beam studies have been carried out on heavily Si-doped GaAs/AlGaAs/GaAs specimens prepared by molecular beam epitaxy. From the measurements of Doppler broadening profiles of the positron annihilation as a function of the incident positron energy, it was found that Ga vacancies with very high concentration are introduced in the GaAs layer by the heavy doping of Si. It was concluded that a Ga vacancy acts to reduce the concentration of free carriers.Keywords
This publication has 15 references indexed in Scilit:
- Shallow positron traps in GaAsPhysical Review B, 1989
- Positron states in Si and GaAsPhysical Review B, 1988
- Positron-annihilation spectroscopy of native vacancies in as-grown GaAsPhysical Review B, 1988
- Interaction of positron beams with surfaces, thin films, and interfacesReviews of Modern Physics, 1988
- Defect formation in H implantation of crystalline SiPhysical Review B, 1988
- Point defects in GaAs studied by correlated positron lifetime, optical, and electrical measurementsPhysica Status Solidi (a), 1988
- Profiling multilayer structures with monoenergetic positronsPhysical Review B, 1987
- Positron study of native vacancies in doped and undoped GaAsJournal of Physics C: Solid State Physics, 1986
- A study of agglomeration and release processes of helium implanted in nickel by a variable energy positron beamJournal of Nuclear Materials, 1985
- Investigation of defects in gallium arsenide using positron annihilationPhysical Review B, 1984