Degenerate doping and conduction-band properties of Si studied by synchrotron photoemission of Sb/Si(001)
- 15 August 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 40 (5) , 3469-3472
- https://doi.org/10.1103/physrevb.40.3469
Abstract
Photoemission of the Sb-covered Si(001) surface showed that the Fermi-level position crosses the conduction-band minimum of Si for Sb coverages approaching a 1-monolayer saturation limit. Momentum-resolved photoemission of the Sb-saturated Si(001) surface revealed the existence of an occupied initial state located near the conduction-band minimum. The metallic character of the surface is shown to be indicative of degenerate doping in the near-surface region.Keywords
This publication has 16 references indexed in Scilit:
- Adsorption and interaction of Sb on Si(001) studied by scanning tunneling microscopy and core-level photoemissionPhysical Review B, 1989
- Sb-induced bulk band transitions in Si(111) and Si(001) observed in synchrotron photoemission studiesPhysical Review B, 1989
- Core-level photoemission studies of surfaces, interfaces, and overlayersCritical Reviews in Solid State and Materials Sciences, 1988
- Interface formation of GaAs with Si(100), Si(111), and Ge(111): Core-level spectroscopy for monolayer coverages of GaAs, Ga, and AsPhysical Review B, 1987
- Growth and characterization of a delta-function doping layer in SiApplied Physics Letters, 1987
- The interaction of Sb4 molecular beams with Si(100) surfaces: Modulated-beam mass spectrometry and thermally stimulated desorption studiesSurface Science, 1986
- Angle-resolved photoemission studies of Ge(111)-c(2×8), Ge(111)-(1×1)H, Si(111)-(7×7), and Si(100)-(2×1)Physical Review B, 1985
- Evaporative antimony doping of silicon during molecular beam epitaxial growthJournal of Applied Physics, 1984
- Angle-resolved photoemission, valence-band dispersions, and electron and hole lifetimes for GaAsPhysical Review B, 1980
- Photoemission studies of intrinsic surface states on Si(100)Journal of Vacuum Science and Technology, 1979