Low noise AlInAs/InGaAs HEMT using WSi ohmic contact

9 June 1994

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 30 (12) , 1009-1010
https://doi.org/10.1049/el:19940633

Abstract

A 0.15 µm T-shaped gate AlInAs/InGaAs HEMT with excellent RF performance has been developed using refractory WSi non-alloyed ohmic contacts. An extremely low noise figure of 0.8 dB with an associated gain of 8.0 dB has been achieved at 40 GHz for an SiON-passivated device.

Keywords

SION-PASSIVATED DEVICE
WSI-ALINAS-INGAAS
SION
WSI OHMIC CONTACT
40 GHZ
REFRACTORY NONALLOYED CONTACTS
0.15 MICRON
T-SHAPED GATE
LOW NOISE DEVICE
HEMT
RF PERFORMANCE
8 DB

This publication has 2 references indexed in Scilit:

Photo/EB hybrid exposure process for T-shaped gate superlow-noise HEMTs
Electronics Letters, 1991
Ultra-high-speed digital circuit performance in 0.2- mu m gate-length AlInAs/GaInAs HEMT technology
IEEE Electron Device Letters, 1988