Demonstration of laser-assisted epitaxial deposition of GexSi1−x alloys on single-crystal Si
- 22 April 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (16) , 1768-1770
- https://doi.org/10.1063/1.105085
Abstract
We report initial results of a novel technique for epitaxial growth of GexSi1−x alloys on single‐crystal Si. During electron beam deposition of amorphous GexSi1−x, an incident XeCl excimer laser, operating at 308 nm with a 30 ns pulse duration, melts and crystallizes the amorphous layer in situ after each ≊5 nm of deposition. This laser‐induced melt extends approximately 20 nm and provides epitaxy from the underlying substrate (or previous layers) at each stage of deposition. This melt/solidification process can be repeated continuously until the final desired alloy thickness is achieved. For layers up to 260 nm with Ge concentrations of 1.5–3 at. %, MeV ion channeling and cross‐sectional transmission electron microscopy confirm epitaxial growth.Keywords
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