Growth condition dependence for GaAs selective epitaxial growth by molecular beam epitaxy
- 1 March 1989
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 18 (2) , 111-115
- https://doi.org/10.1007/bf02657395
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Selective epitaxial growth of gallium arsenide by molecular beam epitaxyApplied Physics Letters, 1987
- Electron mobility in AlxGa1−xAsJournal of Applied Physics, 1979
- Beryllium doping and diffusion in molecular-beam epitaxy of GaAs and AlxGa1−xAsJournal of Applied Physics, 1977