Selective epitaxial growth of gallium arsenide by molecular beam epitaxy
- 9 November 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (19) , 1512-1514
- https://doi.org/10.1063/1.98619
Abstract
GaAs was selectively grown on GaAs substrates patterned with SiO2 by conventional molecular beam epitaxy (MBE). No growth was found on SiO2, except for small GaAs particles, when the substrate temperature was above 700 °C under 1.2×10−5 Torr arsenic pressure. With the increase in the substrate temperature, the selectivity was better while the growth rate decreased. At 775 °C, no growth occurred, even on GaAs. Selective epitaxial growth of GaAs by MBE is promising for application to device fabrications.Keywords
This publication has 15 references indexed in Scilit:
- Selective growth of GaAs in the MOMBE and MOCVD systemsJournal of Crystal Growth, 1986
- Selective Epitaxial Growth of GaAs by Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1985
- Selective epitaxial growth of GaAs by low-pressure MOVPEJournal of Crystal Growth, 1985
- Structural analysis and optical characterization of low GaAs waveguides fabricated by selective epitaxyJournal of Crystal Growth, 1985
- Selective area growth of gallium arsenide by metalorganic vapor phase epitaxyApplied Physics Letters, 1984
- Molecular beam epitaxial growth of GaAs using trimethylgallium as a Ga sourceJournal of Applied Physics, 1984
- Low loss waveguides grown on GaAs using localized vapor phase epitaxyApplied Physics Letters, 1983
- Selective Epitaxial Growth of GaAs by Liquid Phase ElectroepitaxyJournal of the Electrochemical Society, 1982
- Lateral Definition of Monocrystalline GaAs Prepared by Molecular Beam EpitaxyJournal of the Electrochemical Society, 1980
- GaAs planar technology by molecular beam epitaxy (MBE)Journal of Applied Physics, 1975