Properties of closely spaced independently addressable lasers fabricated by impurity-induced disordering
- 23 April 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (17) , 1623-1625
- https://doi.org/10.1063/1.103145
Abstract
We describe the fabrication and characteristics of closely spaced (10 μm) dual-beam laser sources by the process of impurity-induced disordering. We present data demonstrating that these devices are capable of high efficiency and reliable operation when operated in a p-side up configuration. We also show that these devices can be placed in close proximity with a minimal amount of thermal and electrical interaction between devices. These features have significant implications for the realization of high-density arrays of independently addressable lasers for optical interconnection of integrated circuits and optical imaging systems.Keywords
This publication has 5 references indexed in Scilit:
- Demonstration and properties of a planar heterojunction bipolar transistor with lateral current flowIEEE Transactions on Electron Devices, 1989
- Dual-wavelength emission from a twin-stripe single quantum well laserApplied Physics Letters, 1987
- Highly efficient multiple emitter index guided array lasers fabricated by silicon impurity induced disorderingApplied Physics Letters, 1986
- Phase-locked semiconductor laser array with separate contactsApplied Physics Letters, 1983
- High-power individually addressable monolithic array of constricted double heterojunction large-optical-cavity lasersApplied Physics Letters, 1982