Dual-wavelength emission from a twin-stripe single quantum well laser
- 23 November 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (21) , 1664-1666
- https://doi.org/10.1063/1.98536
Abstract
We demonstrate a dual‐wavelength laser constructed from a single quantum well structure. The device includes twin‐stripe waveguides which differ in width. The two constituent emitters in the device of appropriate cavity lengths operate at widely different wavelengths, which are based on the lowest (n=1) and the second (n=2) quantized state transitions. Lasing behavior is interpreted in terms of the difference of the internal cavity loss of the waveguides.Keywords
This publication has 14 references indexed in Scilit:
- Application of AlAs-GaAs superlattices to step-index and graded-index waveguide separate-confinement heterostructure laser diodesJournal of Applied Physics, 1986
- Low threshold planar buried heterostructure lasers fabricated by impurity-induced disorderingApplied Physics Letters, 1985
- Device characteristics of GaAlAs buried-multiquantum-well lasers fabricated by Zn-diffusion-induced disorderingIEEE Journal of Quantum Electronics, 1985
- Heterostructure semiconductor lasers prepared by molecular beam epitaxyIEEE Journal of Quantum Electronics, 1984
- Dual-wavelength (GaAl)As laserElectronics Letters, 1982
- InGaAsP/InP dual-wavelength BH laser arrayElectronics Letters, 1982
- InGaAsP/InP Dual-Wavelength BH LaserJapanese Journal of Applied Physics, 1982
- InGaAsP/InP dual wavelength lasersElectronics Letters, 1982
- Measurement of stresses in optical fibre or preformElectronics Letters, 1982
- Quantum-well heterostructure lasersIEEE Journal of Quantum Electronics, 1980