Low threshold planar buried heterostructure lasers fabricated by impurity-induced disordering
- 15 December 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (12) , 1239-1241
- https://doi.org/10.1063/1.96290
Abstract
We report on the fabrication of index-guided buried heterostructure lasers by the process of silicon impurity-induced disordering. This fabrication process for a buried heterostructure laser offers the advantage of reduced fabrication complexity over previous fabrication methods. We present measurements that demonstrate the operation of these devices in a single longitudinal mode, fundamental transverse mode, and with cw threshold currents as low as 3 mA. We also have extracted 80 mW cw from a device with a 10-mA threshold current. Our results indicate that this process has great potential for the fabrication of low threshold, efficient light sources.Keywords
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