Disorder of an AlxGa1−xAs-GaAs superlattice by donor diffusion
- 1 September 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (5) , 549-551
- https://doi.org/10.1063/1.95318
Abstract
The Si impurity is diffused (850 °C, 10 h, xj ∼2.4 μm) into 2.4 μm of AlxGa1−xAs‐GaAs (x≳0.6) superlattice (barrier LB ≊320 Å, quantum well Lz ≊280 Å) and disorders it into bulk‐crystal Alx′Ga1‐x′As (x′≳0.32). The as‐grown infrared gap superlattice is converted selectively to red gap bulk crystal and, where undiffused and not disordered, is still capable of continuous 300‐K photopumped laser operation at a threshold of 4×103 W/cm2 (or Jeq ∼1.7×103 A/cm2, 5145 Å pump photon).Keywords
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