Disordering of Ga1−xAlxAs-GaAs quantum well structures by donor sulfur diffusion
- 1 May 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (9) , 867-869
- https://doi.org/10.1063/1.95868
Abstract
We show here, for the first time, that disordering (alloy mixing) on group III sublattice of GaAlAs-GaAs quantum well (QW) structures can be accomplished by the introduction of a group V site substitutional donor impurity. This is achieved by performing donor sulfur diffusions at 850 °C (for varied durations 1 to 14 h) under open-tube conditions in molecular beam epitaxy as well as metalorganic chemical vapor deposition grown GaAlAs-GaAs QW structures. Using simple photoluminescence measurements at room temperature, we provide relevant evidence that the degree of alloy mixing (and so the resulting Al composition) is dependent on the diffused S concentration.Keywords
This publication has 15 references indexed in Scilit:
- Disorder of an AlxGa1−xAs-GaAs superlattice by donor diffusionApplied Physics Letters, 1984
- Disordering of Si-Doped AlAs/GaAs Superlattice by AnnealingJapanese Journal of Applied Physics, 1984
- GaAlAs buried multiquantum well lasers fabricated by diffusion-induced disorderingApplied Physics Letters, 1984
- Disorder of an InxGa1−xAs-GaAs superlattice by Zn diffusionJournal of Applied Physics, 1983
- Impurity induced disordering of strained GaP-GaAs1−xPx(x∼0.6) superlatticesApplied Physics Letters, 1983
- Intermixing of an AlAs-GaAs superlattice by Zn diffusionJournal of Applied Physics, 1982
- Theoretical investigations of superlattice band structure in the envelope-function approximationPhysical Review B, 1982
- Disorder of an AlAs-GaAs superlattice by silicon implantationApplied Physics Letters, 1982
- Disorder of an AlAs-GaAs superlattice by impurity diffusionApplied Physics Letters, 1981
- Radiative recombination from GaAs directly excited by electron beamsSolid State Communications, 1964