Impurity-induced enhancement of the growth rate of amorphized silicon during solid-phase epitaxy: A free-carrier effect
- 15 January 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (2) , 432-438
- https://doi.org/10.1063/1.336649
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
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