Theory of the memory effect in thiourea. Defect density waves in modulated systems
- 1 January 1984
- journal article
- Published by EDP Sciences in Journal de Physique Lettres
- Vol. 45 (12) , 627-637
- https://doi.org/10.1051/jphyslet:019840045012062700
Abstract
A simple Landau-Ginzburg theory is shown to account qualitatively and semi-quantitatively for the memory effect anomalies of the susceptibility and the birefringence in thiourea. The importance of the gradient amplitude coupling energy in thiourea is emphasized. The possibility of creating a defect-induced locked incommensurate phase around any arbitrary temperature within the modulated phase is demonstrated. Such a locked phase will appear as a consequence of the condensation of a periodic defect concentration if extrinsic mobile impurities are allowed to interact for a sufficient time with a static modulation. We briefly discuss some aspects of such defect density waves in the physics of modulated structuresKeywords
This publication has 14 references indexed in Scilit:
- Slow relaxation of the line shape of the incommensurate satellites in barium sodium niobatePhysical Review B, 1984
- Memory effect in thiourea: SC(ND2)2Ferroelectrics Letters Section, 1984
- Thiourea under a High Electric Field: X-Ray StudiesPhysical Review Letters, 1983
- Thiourea in an electric field: Birefringence measurements and the Landau-Ginzburg theoryPhysical Review B, 1983
- Pinning effects in incommensurately modulated structuresJournal of Physics C: Solid State Physics, 1983
- Electric-Field-Induced Commensurate Phase in Deuterated ThioureaPhysical Review Letters, 1982
- Field-Induced Commensurate Phase in ThioureaPhysical Review Letters, 1982
- Successive Phase Transitions in Ferroelectric NaNO2 and SC(NH2)2Journal of the Physics Society Japan, 1978
- Theory of discommensurations and the commensurate-incommensurate charge-density-wave phase transitionPhysical Review B, 1976
- Critical Behavior at the Onset of-Space Instability on theLinePhysical Review Letters, 1975