Quantum cascade lasers with low-loss chalcogenide lateral waveguides
- 1 March 2001
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 13 (3) , 182-184
- https://doi.org/10.1109/68.914314
Abstract
Quantum cascade lasers have been fabricated with chalcogenide lateral waveguide claddings. Several-micrometer thick Ge/sub 0.25/Se/sub 0.75/ glass has been deposited by pulsed laser ablation onto the sidewalls of narrow, deep etched laser ridges. Due to the intrinsically low mid-infrared attenuation of the chalcogenide material, the waveguide loss of the lasers is significantly reduced, by up to /spl sim/50%, depending on the ridge width, when compared to conventional ridge waveguides. This resulted in an improved overall laser performance, such as a reduction of the threshold current density, an increase in slope efficiency, and an improved temperature performance.Keywords
This publication has 10 references indexed in Scilit:
- Quantum cascade lasersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A quantum cascade laser fabricated using planar native-oxide layersApplied Physics Letters, 2000
- Monolithic active mode locking of quantum cascade lasersApplied Physics Letters, 2000
- A quantum cascade laser based on an n-i-p-i superlatticeIEEE Photonics Technology Letters, 2000
- Improved CW operation of quantum cascade lasers with epitaxial-side heat-sinkingIEEE Photonics Technology Letters, 1999
- Dependence of the device performance on the number of stages in quantum-cascade lasersIEEE Journal of Selected Topics in Quantum Electronics, 1999
- High-power λ≈8 μm quantum cascade lasers with near optimum performanceApplied Physics Letters, 1998
- Buried heterostructure quantum cascade lasersPublished by SPIE-Intl Soc Optical Eng ,1998
- Quantum Cascade LaserScience, 1994
- Gain spectra in GaAs double−heterostructure injection lasersJournal of Applied Physics, 1975