Homoepitaxial Growth of InSb by Vacuum Metal-Organic Chemical Vapor Deposition
- 1 December 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (12A) , L925
- https://doi.org/10.1143/jjap.24.l925
Abstract
Homoepitaxial growth of InSb using metal-organic vapor under a total gas pressure of about 10-3 Torr has been investigated. Single crystal films with smooth surface were obtained at substrate temperatures of as low as 400°C. The conduction type and impurity density of the epitaxial layer evaluated by Metal-Oxide-Semiconductor Capacitance-Voltage (MOS C-V) method were p-type and 2×1015 cm-3, respectively, at 77 K.Keywords
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