SiC Smart Power JFET Technology for High-Temperature Applications
- 15 October 2006
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 527-529, 1207-1210
- https://doi.org/10.4028/www.scientific.net/msf.527-529.1207
Abstract
Wide bandgap semiconductor materials such as SiC or GaN are very attractive for use in high-power, high-temperature, and/or radiation resistant electronics. Monolithic or hybrid integration of a power transistor and control circuitry in a single or multi-chip wide bandgap power semiconductor module is highly desirable for such applications in order to improve the efficiency and reliability. This paper describes a new monolithic SiC JFET IC technology for high-temperature smart power applications that allows for on-chip integration of control circuitry and normally-off power switch. In order to demonstrate the feasibility of this technology, hybrid logic gates with maximum switching frequency > 20 MHz and normally-off 900 V power switch have been fabricated on alumina substrates using discrete enhanced and depletion mode vertical trench JFETs.Keywords
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