SiC power devices with low on-resistance for fast switching applications

This publication has 11 references indexed in Scilit:

• High temperature, high current, p-channel UMOS 4H-SiC IGBT
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
• Dynamic characteristics of high voltage 4H-SiC vertical JFETs
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
• COOLMOS/sup TM/-a new milestone in high voltage power MOS
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
• Advances in electronic packaging technologies to temperatures as high as 500°C
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• Static and Dynamic Characteristics of 4H-SiC JFETs Designed for Different Blocking Categories
  Materials Science Forum, 2000
• Rugged Power MOSFETs in 6H-SiC with Blocking Capability up to 1800V
  Materials Science Forum, 2000
• Significantly improved performance of MOSFETs on silicon carbide using the 15R-SiC polytype
  IEEE Electron Device Letters, 1999
• Megawatt solid-state electronics
  Solid-State Electronics, 1998
• Investigation of metallization schemes for high temperature devices based on silicon carbide
  Analytical and Bioanalytical Chemistry, 1998
• High Voltage Silicon Carbide Devices
  MRS Proceedings, 1998