Dynamic characteristics of high voltage 4H-SiC vertical JFETs

Publisher Website

20 January 2003

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/ispsd.1999.764129

Abstract

No abstract available

Keywords

This publication has 4 references indexed in Scilit:

Electrical performance of triple implanted vertical silicon carbide MOSFETs with low on-resistance
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
The potential of fast high voltage SiC diodes
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
An 1800 V triple implanted vertical 6H-SiC MOSFET
IEEE Transactions on Electron Devices, 1999
High-voltage double-implanted power MOSFET's in 6H-SiC
IEEE Electron Device Letters, 1997