Interdiffusion measurements in asymmetrically strained SiGe/Si superlattices
- 25 June 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (26) , 2628-2630
- https://doi.org/10.1063/1.102858
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- X-ray studies of heat treated SiGe/Si strained-layer superlatticesJournal of Vacuum Science & Technology B, 1990
- Interdiffusion in a symmetrically strained Ge/Si superlatticeApplied Physics Letters, 1989
- Experimental evidence of both interstitial- and vacancy-assisted diffusion of Ge in SiApplied Physics Letters, 1989
- Interdiffusion in Si/Ge amorphous multilayer filmsApplied Physics Letters, 1985
- Investigations by SIMS of the bulk impurity diffusion of Ge in SiPhilosophical Magazine A, 1984
- X-ray diffraction study of interdiffusion and growth in (GaAs)n(AlAs)m multilayersJournal of Applied Physics, 1980
- Effect of Gradient Energy on Diffusion in Gold-Silver AlloysJournal of Applied Physics, 1969
- On spinodal decompositionActa Metallurgica, 1961
- Free Energy of a Nonuniform System. I. Interfacial Free EnergyThe Journal of Chemical Physics, 1958
- An X-Ray Method of Determining Rates of Diffusion in the Solid StateJournal of Applied Physics, 1940