Copper-phthalocyanine field-effect transistor with a low driving voltage

Copper-phthalocyanine-thin-film metal-insulator-semiconductor field-effect transistors operating with a low driving voltage have been fabricated by using a ${\mathrm{PbZr}}_{0.5}{\mathrm{Ti}}_{0.5}{\mathrm{O}}_3$ film as a high-permittivity insulator layer $\left(\epsilon \approx 500\right)$ . A field mobility of about $0.017{\mathrm{cm}}^2∕\mathrm{Vs}$ and an ON/OFF ratio of more than ${10}^3$ were obtained at a gate voltage of $-2\mathrm{V}$ and a drain-source voltage of $-1\mathrm{V}$ . This $p$ -type copper-phthalocyanine transistor has a driving voltage low enough for practical device applications.