Multiple reflection high-energy electron diffraction beam intensity measurement system
- 1 February 1990
- journal article
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 61 (2) , 771-774
- https://doi.org/10.1063/1.1141492
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Phase of reflection high-energy electron-diffraction intensity oscillations during molecular-beam-epitaxy growth of GaAs(100)Physical Review B, 1989
- NMR evidence for a phason gap inPhysical Review B, 1989
- Effects of Kikuchi scattering on reflection high-energy electron diffraction intensities during molecular-beam epitaxy GaAs growthJournal of Vacuum Science & Technology A, 1989
- Elimination of the flux transients from molecular-beam epitaxy source cells following shutter operationJournal of Vacuum Science & Technology B, 1988
- Reproducible growth conditions by group III and group V controlled incorporation rate measurementsJournal of Vacuum Science & Technology B, 1988
- Intensity oscillations for electron beams reflected during epitaxial growth of metalsPhysical Review B, 1987
- Effects of diffraction conditions and processes on rheed intensity oscillations during the MBE growth of GaAsApplied Physics A, 1987
- Current understanding and applications of the RHEED intensity oscillation techniqueJournal of Crystal Growth, 1987
- Video system for quantitative measurements of RHEED patternsReview of Scientific Instruments, 1986
- Damped oscillations in reflection high energy electron diffraction during GaAs MBEJournal of Vacuum Science & Technology B, 1983