Diffusion-profile measurement in InP with Schottky diodes
- 1 November 1982
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 25 (11) , 1135-1139
- https://doi.org/10.1016/0038-1101(82)90154-x
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Carrier Density Profiles in Zn- and Cd-Diffused InPJapanese Journal of Applied Physics, 1981
- Shallow and selective diffusion of zinc in indium phosphideSolid-State Electronics, 1981
- Formation of p+-p−-n− junctions in InP by Cd diffusionApplied Physics Letters, 1980
- Diffusion profiles of zinc in indium phosphideJournal of Physics D: Applied Physics, 1975
- Depletion Capacitance and Diffusion Potential of Gallium Phosphide Schottky-Barrier DiodesJournal of Applied Physics, 1966