Two-Dimensional Profiling of Dopants in Semiconductor Devices Using Preferential Etching/Tem Method
- 1 January 1997
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Two-dimensional junction profiling by selective chemical etching: Applications to electron device characterizationJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Two-dimensional dopant profiling of very large scale integrated devices using selective etching and atomic force microscopyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Two-dimensional scanning capacitance microscopy measurements of cross-sectioned very large scale integration test structuresJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Transmission electron microscopy study of two-dimensional semiconductor device junction delineation by chemical etchingJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Characterization of structure/dopant behavior by electron microscopyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Delineation of Shallow Junctions in Silicon by Transmission Electron MicroscopyJournal of the Electrochemical Society, 1981