Atomic Sn, Sb, and Ge photodissociation lasers
- 1 October 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 16 (10) , 1014-1016
- https://doi.org/10.1109/jqe.1980.1070362
Abstract
Stimulated emission has been observed on the 380.1 nm line of atomic tin, the 326.7 nm line of atomic antimony, and the 326.9 nm line of atomic germanium following photodissociation of SnI2, SbI3, and GeI4molecular vapors. A 193 nm ArF laser was used as the excitation source. Bond energies for the dissociation of monoiodides were estimated. Output energies of 200, 80, and 75 μJ were obtained for 380.1, 326.7, and 326.9 nm transitions, respectively.Keywords
This publication has 12 references indexed in Scilit:
- Atomic-transition lasers based on two-photon dissociation of metal–triiodide vaporsOptics Letters, 1979
- Atomic gallium photodissociation laserApplied Physics Letters, 1979
- Alkali-metal resonance-line lasers based on photodissociationApplied Physics Letters, 1979
- Efficient thallium photodissociation laserApplied Physics Letters, 1978
- Inversion of the Na resonance line by selective photodissociation of NaIApplied Physics Letters, 1978
- Ultraviolet absorption cross sections of HgI2, HgBr2, and tin (II) halide vaporsThe Journal of Chemical Physics, 1977
- Mercuric bromide photodissociation laserApplied Physics Letters, 1977
- Optical Properties of Tin Iodide VaporThe Journal of Chemical Physics, 1969
- Über thermische Eigenschaften von Halogeniden. 13. Sättigungsdrucke von Zinn II‐halogenidenZeitschrift für anorganische und allgemeine Chemie, 1939
- Die Absorptionsspektren der Dämpfe der Halogenverbindungen von dreiwertigem Wismut und AntimonThe European Physical Journal A, 1934