A Simplified Theory of Negative Resistance Diode

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Abstract
Taking account of the charge conditions of deep donors in the intrinsic region, V-I characteristics of N-I junction diode are studied theoretically. It is shown that mobility of the intrinsic region increases with the voltage applied across the junction and the diode exhibits current controlled negative resistance. The dependences of V-I characteristics on temperature are also calculated. The results show that the threshold voltage V th decreases with the increase of temperature, on the other hand, the sustaining voltage V m is almost independent of temperature. The results are in fair qualitative agreement with experiments and several characteristics of Cryosar can be explained by this simplified model.

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