Electrical activation of B in the presence of boron-interstitials clusters
- 3 December 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 79 (23) , 3764-3766
- https://doi.org/10.1063/1.1423775
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Effects of boron-interstitial silicon clusters on interstitial supersaturation during postimplantation annealingApplied Physics Letters, 2001
- Identification of stable boron clusters in c-Si using tight-binding staticsJournal of Applied Physics, 2001
- Boron-interstitial silicon clusters and their effects on transient enhanced diffusion of boron in siliconJournal of Applied Physics, 2000
- Ab initio energetics of boron-interstitial clusters in crystalline SiApplied Physics Letters, 2000
- Role of self- and boron-interstitial clusters in transient enhanced diffusion in siliconApplied Physics Letters, 2000
- B cluster formation and dissolution in Si: A scenario based on atomistic modelingApplied Physics Letters, 1999
- Energetics of Self-Interstitial Clusters in SiPhysical Review Letters, 1999
- Physical mechanisms of transient enhanced dopant diffusion in ion-implanted siliconJournal of Applied Physics, 1997
- Transient enhanced diffusion without {311} defects in low energy B+-implanted siliconApplied Physics Letters, 1995
- A Monte Carlo computer program for the transport of energetic ions in amorphous targetsNuclear Instruments and Methods, 1980