The Hall effect and hole densities in high Tc GaMnAs thin films

Preprint

23 August 2002

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/0205517

Abstract

By studying the Hall effect in a series of low resistivity Ga1-xMnxAs samples, accurate values for the hole density p, Mn concentration x, and Curie temperature Tc are obtained over the range 0.015=<x=<0.08. The hole density corresponds to 90% of the Mn concentration at low x, and has a maximum value of 1.0x10-27 m-3 when Tc=125K for x=0.06. This data allows the first meaningful comparison of mean field predicted Curie temperatures with experiment over a wide range of x. The theory is in qualitative agreement with experiment, but overestimates Tc at large x and underestimates TC at low x.

Keywords

CURIE TEMPERATURE
MN CONCENTRATION
HOLE DENSITY
HALL EFFECT
THIN FILMS
LOW X
CURIE

All Related Versions

Version 1, 2002-05-24, ArXiv
Version 2, 2002-08-05, ArXiv
Version 3, 2002-08-23, ArXiv

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