The Hall effect and hole densities in GaMnAs

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Abstract
We have studied how the hole density p and Curie temperature TC depend on Mn concentration x in the ferromagnetic semiconductor GaMnAs. By separating the normal and anomalous contributions to the Hall resistance, accurate values of p are obtained for a series of metallic samples with 0.02=< x =<0.08. The hole density is relatively insensitive to x for x=<0.06, and is significantly reduced for x=0.08, indicating that autocompensation mechanisms are important in this system. However, low temperature annealing substantially increases p, resulting in a TC above 110K.

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