Measurement of Electron and Hole Saturation Velocities in Silicon Inversion Layers Using Soi Mosfets
- 24 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 112-113
- https://doi.org/10.1109/soi.1992.664819
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Hot Electron Effects and Saturation Velocities in Silicon Inversion LayersJournal of Applied Physics, 1970