MANY-BODY EFFECTS AND THE METAL–INSULATOR TRANSITION AT SEMICONDUCTOR SURFACES AND INTERFACES
- 1 June 1999
- journal article
- review article
- Published by World Scientific Pub Co Pte Ltd in Surface Review and Letters
- Vol. 06 (03n04) , 411-433
- https://doi.org/10.1142/s0218625x99000421
Abstract
No abstract availableKeywords
This publication has 47 references indexed in Scilit:
- Electron correlation effects at semiconductor surfaces and interfaces: Si(111)-5x5, Si(111)-7x7 and SnGe(111)Progress in Surface Science, 1998
- Low-temperature photoemission study of the surface electronic structure ofPhysical Review B, 1998
- Dynamical mean-field theory of strongly correlated fermion systems and the limit of infinite dimensionsReviews of Modern Physics, 1996
- Alkali adsorption on GaAs(110): atomic structure, electronic states and surface dipolesSurface Science Reports, 1993
- Large-scale ab initio total energy calculations on parallel computersComputer Physics Communications, 1992
- Electron Correlation Effects in the Low-Coverage Regime of Metals Deposited on GaAs(110)Europhysics Letters, 1992
- Self-consistent Green functions for the Anderson impurity modelPhysical Review B, 1992
- Geometric and electronic properties of Cs structures on III-V (110) surfaces: From 1D and 2D insulators to 3D metalsPhysical Review Letters, 1991
- Semiconductor-to-metal transition in an ultrathin interface: Cs/GaAs(110)Physical Review Letters, 1990
- Self-interaction correction to density-functional approximations for many-electron systemsPhysical Review B, 1981