The use of spatially-dependent carrier capture rates for deep-level-defect transient studies
- 30 September 1983
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 26 (9) , 825-833
- https://doi.org/10.1016/0038-1101(83)90052-7
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Photocapacitance Studies of the Oxygen Donor in GaP. I. Optical Cross Sections, Energy Levels, and ConcentrationPhysical Review B, 1973